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日立能源ABB PCT二极管5STP 04D4200
Phase Control Thyristor5STP 04D4200VDRM=4200 VIT(A V)M=500 AIT(RMS)=785 AITSM= 7.1103AVT0=1.14 VrT=1.288 mW专利浮动硅技术低导通损耗和开关损耗为牵引、能源和工业应用而设计最优的功率处理能力普通晶闸管（可控硅）（PCT）晶闸管通常作为相控电流阀用于交流变直流及直流变交流的转换，并在较低的频率中运行（大多都
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2025-07-27 |
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日立能源ABB PCT二极管5STP 12F4200
Phase Control Thyristor5STP 12F4200VDRM=4200 VIT(A V)M=1190 AIT(RMS)=1860 AITSM= 17.3103AVT0=1.01 VrT=0.545 mW
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2025-07-27 |
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日立能源ABB PCT二极管5STP 18H4200
Phase Control Thyristor5STP 18H4200VDRM=4200 VIT(A V)M=2170 AIT(RMS)=3400 AITSM= 32.0103AVT0=0.982 VrT=0.274 mW
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2025-07-27 |
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日立能源ABB PCT二极管5STP 28L4200
Phase Control Thyristor5STP 28L4200VDRM=4200 VIT(A V)M=3290 AIT(RMS)=5160 AITSM= 54.0103AVT0=1.03 VrT=0.138 mW
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2025-07-27 |
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日立能源ABB PCT二极管5STP 38N4200
Phase Control Thyristor5STP 38N4200VDRM=4200 VIT(A V)M=4090 AIT(RMS)=6420 AITSM= 64.5103AVT0=0.973 VrT=0.126 m
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2025-07-27 |
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日立能源ABB PCT二极管5STP 38Q4200
Phase Control Thyristor5STP 38Q4200VDRM=4200 VIT(A V)M=4420 AIT(RMS)=6950 AITSM= 64.5103AVT0=0.973 VrT=0.126 mW
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2025-07-27 |
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日立能源ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(A V)M = 420 AIT(RMS) = 650 AITSM = 6.1103 AVT0 = 1.29 VrT = 1.917 mΩDoc. No. 5SYA1026-08 May. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, en
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2025-07-27 |
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日立能源ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(A V)M = 1970 AIT(RMS) = 3090 AITSM = 34.0103 AVT0 = 0.994 VrT = 0.343 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
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2025-07-27 |
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