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日立能源ABB IGBT模块5SNA 0650J450300
价格：电议/面议起订量： 1供货总量： 999发货期： 10天内发货包装说明:： 盒装产品规格： 只日期： 2024ABB HiPak IGBT Module5SNA 0650J450300VCE = 4500 VIC = 650 A超低损耗、坚固耐用的SPT+芯片组平滑切换SPT+芯片组，实现良好的EMC工业标准封装高功率密度用于高功率循环能力的AlSiC基板低热阻氮化铝基板改进的高可靠
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2025-08-12 |
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日立能源ABB IGBT模块5SNA0800J450300
ABB IGBT模块5SNA0800J450300价格：电议/面议起订量： 1供货总量： 999发货期： 10天内发货包装说明:： 盒装产品规格： 只日期： 2024ABB HiPak IGBT Module5SNA 0800J450300VCE = 4500 VIC = 800 A超低损耗、坚固耐用的SPT+芯片组平滑切换SPT+芯片组，实现良好的EMC工业标准封装高功率密度用于高功率循环能力的AlSiC基板低
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2025-08-12 |
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日立能源ABB IGBT模块5SNA1200G450350
ABB IGBT模块5SNA1200G450350价格：电议/面议起订量： 1供货总量： 999发货期： 10天内发货包装说明:： 盒装产品规格： 只日期： 2024ABB HiPak IGBT Module5SNA 1200G450350VCE = 4500 VIC = 1200 A超低损耗、坚固耐用的SPT+芯片组平滑切换SPT+芯片组，实现良好的EMC工业标准封装高功率密度用于高功率循环能力的AlSiC基板
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(A V)M = 3450 AIT(RMS) = 5420 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for tr
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction,
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor VDRM, VRRM = 6500 V ITA Vm = 390 A ITSM = 4700 A VT0 = 1.200 V rT = 2.300 mΩ Patented free-floating silicon technology Low on-state losses Designed for energy and industrial applications Optimum power handling cap
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(A V)M = 340 AIT(RMS) = 540 AITSM = 4.7103 AVT0 = 1.20 VrT = 2.30 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applicati
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 08F6500
Phase Control Thyristor5STP 08F6500VDRM = 6500 VIT(A V)M = 850 AIT(RMS) = 1340 AITSM = 15.1103 AVT0 = 1.20 VrT = 1.046 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applic
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2025-08-12 |
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