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日立ABB IGBT模块,PNJ(派恩杰)碳化硅分立器件及模块,Lite-On(光宝)光耦驱动...

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日立能源ABB PCT二极管5STP 38Q4200
Phase Control Thyristor5STP 38Q4200VDRM=4200 VIT(A V)M=4420 AIT(RMS)=6950 AITSM= 64.5103AVT0=0.973 VrT=0.126 mW
2025-07-27
日立能源ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(A V)M = 420 AIT(RMS) = 650 AITSM = 6.1103 AVT0 = 1.29 VrT = 1.917 mΩDoc. No. 5SYA1026-08 May. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, en
2025-07-27
日立能源ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(A V)M = 1970 AIT(RMS) = 3090 AITSM = 34.0103 AVT0 = 0.994 VrT = 0.343 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
2025-07-27
日立能源ABB PCT晶闸管5STP 25L5200
Phase Control Thyristor5STP 25L5200VDRM = 5200 VIT(A V)M = 2830 AIT(RMS) = 4450 AITSM = 50.5103 AVT0 = 0.990 VrT = 0.237 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
2025-07-27
日立能源ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(A V)M = 2400 AIT(RMS) = 3770 AITSM = 50.5103 AVT0 = 0.990 VrT = 0.237 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
2025-07-27
ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(A V)M = 3450 AIT(RMS) = 5420 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for tr
2025-05-16
ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction,
2025-05-16
ABB PCT晶闸管5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(A V)M = 5200 AIT(RMS) = 8170 AITSM = 99.0103 AVT0 = 1.04 VrT = 0.115 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
2025-05-16