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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(A V)M = 340 AIT(RMS) = 540 AITSM = 4.7103 AVT0 = 1.20 VrT = 2.30 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applicati
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 08F6500
Phase Control Thyristor5STP 08F6500VDRM = 6500 VIT(A V)M = 850 AIT(RMS) = 1340 AITSM = 15.1103 AVT0 = 1.20 VrT = 1.046 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applic
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 12K6500
Phase Control Thyristor5STP 12K6500VDRM = 6500 VIT(A V)M = 1430 AIT(RMS) = 2250 AITSM = 31.5103 AVT0 = 1.15 VrT = 0.647 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(A V)M = 1830 AIT(RMS) = 2870 AITSM = 47.5103 AVT0 = 1.21 VrT = 0.431 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(A V)M = 2880 AIT(RMS) = 4520 AITSM = 65.0103 AVT0 = 1.12 VrT = 0.290 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 40x6500
5STP 40x6500Phase Control ThyristorVDRM = 6500 VITM = 3780 AIT(RMS) = 5930 AITSM = 65.0103 AVT0 = 1.14 VrT = 0.259 mΩHigh forward and surge current ratingLow on-state and switching lossesDesigned for industrial, renewable, and traction applicationsOp
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 42U6500
Phase Control Thyristor5STP 42U6500VDRM = 6500 VIT(A V)M = 4300 AIT(RMS) = 6750 AITSM = 86.0103 AVT0 = 1.17 VrT = 0.181 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB IGBT模块5SNA1500G450350
ABB IGBT模块5SNA1500G4503505SNA 1500G450350HiPak IGBT ModuleVCE = 4500 VIC = 1500 A超低损耗SPT++技术具有增加的二极管面积的非常软开关FCE二极管卓悦的坚固性和高的额定电流高绝缘封装用于高功率循环能力的AlSiC基板低热阻氮化铝基板根据UL1557，文件E 196689认可ABB IGBT模块5SNA1500G450350ABB的 IGBT功率模块为电
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2025-07-27 |
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