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日立能源 5SNG 0450R170301
供应 ABB IGBT模块5SNG 0450R170301ABB IGBT模块5SNG0450R1703015SNG 0450R170301LoPak1相腿IGBT模块VCE=1700伏集成电路=2x450安培用于可靠辅助触点的压配销低损耗、平滑切换的SPT++芯片组用于温度检测的NTC热敏电阻低热阻铜基板工业标准封装ABB的 IGBT功率模块为电压从1700伏特至6500伏特的单一IGBT，双/桥臂式IGBT，斩波
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2026-01-14 |
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日立能源ABB IGBT模块5SNG 0600R120501
ABB IGBT模块5SNG0600R1205015SNG0600R120501参数：1200V 2*600A主要用于通用变频器、电源等行业VCE = 1200 VIC = 2x 600 A可靠的辅助触点的压配合销超低损耗坚固的壕沟IGBT芯片组NTC热敏电阻用于低热阻性的铜基板行业标准封装ABB IGBT模块5SNG0600R120501ABB IGBT模块5SNG0600R120501ABB IGBT模块5SNG0600R120501 ABB的
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2026-01-14 |
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日立能源ABB IGBT模块5SNG 0750R170500
供应 ABB IGBT模块5SNG 0750R170500ABB IGBT模块5SNG0750R1705005SNG 0750R170500LoPak1相腿IGBT模块VCE=1700伏集成电路=2x750安培用于可靠辅助触点的压配销低损耗、平滑切换的SPT++芯片组用于温度检测的NTC热敏电阻低热阻铜基板工业标准封装ABB的 IGBT功率模块为电压从1700伏特至6500伏特的单一IGBT，双/桥臂式IGBT，斩波
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(A V)M = 5200 AIT(RMS) = 8170 AITSM = 99.0103 AVT0 = 1.04 VrT = 0.115 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-12-20 |
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日立能源ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(A V)M = 2400 AIT(RMS) = 3770 AITSM = 50.5103 AVT0 = 0.990 VrT = 0.237 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
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2025-12-17 |
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日立能源ABB PCT晶闸管 5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(A V)M = 3450 AIT(RMS) = 5420 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for tr
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2025-12-17 |
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日立能源ABB PCT晶闸管 5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction,
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2025-12-17 |
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日立能源ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(A V)M = 420 AIT(RMS) = 650 AITSM = 6.1103 AVT0 = 1.29 VrT = 1.917 mΩDoc. No. 5SYA1026-08 May. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, en
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2025-12-13 |
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