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日立能源ABB PCT晶闸管 5STP 42U6500
Phase Control Thyristor5STP 42U6500VDRM = 6500 VIT(A V)M = 4300 AIT(RMS) = 6750 AITSM = 86.0103 AVT0 = 1.17 VrT = 0.181 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 27N8500
Phase Control Thyristor5STP 27N8500VDRM=8500 VIT(A V)M=2660 AIT(RMS)=4180 AITSM= 64.0103AVT0=1.13 VrT=0.394 mPatented free-floating silicon technologyLow on-state and switching lossesDesigned for traction, energy and industrial applicationsOptimum power
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 27Q8500
Phase Control Thyristor5STP 27Q8500VDRM = 8500 VIT(A V)M = 2870 AIT(RMS) = 4510 AITSM = 64.0103 AVT0 = 1.13 VrT = 0.394 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2026-01-14 |
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日立能源 5SNG 0450R170301
供应 ABB IGBT模块5SNG 0450R170301ABB IGBT模块5SNG0450R1703015SNG 0450R170301LoPak1相腿IGBT模块VCE=1700伏集成电路=2x450安培用于可靠辅助触点的压配销低损耗、平滑切换的SPT++芯片组用于温度检测的NTC热敏电阻低热阻铜基板工业标准封装ABB的 IGBT功率模块为电压从1700伏特至6500伏特的单一IGBT，双/桥臂式IGBT，斩波
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2026-01-14 |
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日立能源ABB IGBT模块5SNG 0600R120501
ABB IGBT模块5SNG0600R1205015SNG0600R120501参数：1200V 2*600A主要用于通用变频器、电源等行业VCE = 1200 VIC = 2x 600 A可靠的辅助触点的压配合销超低损耗坚固的壕沟IGBT芯片组NTC热敏电阻用于低热阻性的铜基板行业标准封装ABB IGBT模块5SNG0600R120501ABB IGBT模块5SNG0600R120501ABB IGBT模块5SNG0600R120501 ABB的
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2026-01-14 |
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日立能源ABB IGBT模块5SNG 0750R170500
供应 ABB IGBT模块5SNG 0750R170500ABB IGBT模块5SNG0750R1705005SNG 0750R170500LoPak1相腿IGBT模块VCE=1700伏集成电路=2x750安培用于可靠辅助触点的压配销低损耗、平滑切换的SPT++芯片组用于温度检测的NTC热敏电阻低热阻铜基板工业标准封装ABB的 IGBT功率模块为电压从1700伏特至6500伏特的单一IGBT，双/桥臂式IGBT，斩波
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(A V)M = 5200 AIT(RMS) = 8170 AITSM = 99.0103 AVT0 = 1.04 VrT = 0.115 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-12-20 |
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日立能源ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(A V)M = 2400 AIT(RMS) = 3770 AITSM = 50.5103 AVT0 = 0.990 VrT = 0.237 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appl
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2025-12-17 |
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