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日立能源ABB PCT二极管5STP 27H1800
Phase Control Thyristor5STP 27H1800VDRM=1800 VIT(A V)M=2940 AIT(RMS)=4620 AITSM= 50.5103AVT0=0.912 VrT=0.096 mW 专利浮动硅技术 低导通损耗和开关损耗 为牵引、能源和工业应用而设计 最优的功率处理能力普通晶闸管（可控硅）（PCT）晶闸管通常作为相控电流阀用于交流变直流及直流变交流的转换，并在较低的频率中运行
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2026-01-17 |
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日立能源ABB PCT二极管5STP 18F1810
5STP 18F1810Phase control thyristorVDRM, VRRM= 1800 VITA Vm= 1780 AITSM= 21000 AVT0= 0.923 VrT= 0.188 mΩ 专利浮动硅技术 低导通损耗和开关损耗 为牵引、能源和工业应用而设计 最优的功率处理能力普通晶闸管（可控硅）（PCT）晶闸管通常作为相控电流阀用于交流变直流及直流变交流的转换，并在较低的频率中运行
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2026-01-15 |
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日立能源ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor VDRM, VRRM = 6500 V ITA Vm = 390 A ITSM = 4700 A VT0 = 1.200 V rT = 2.300 mΩ Patented free-floating silicon technology Low on-state losses Designed for energy and industrial applications Optimum power handling cap
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2026-01-14 |
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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(A V)M = 340 AIT(RMS) = 540 AITSM = 4.7103 AVT0 = 1.20 VrT = 2.30 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applicati
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 08F6500
Phase Control Thyristor5STP 08F6500VDRM = 6500 VIT(A V)M = 850 AIT(RMS) = 1340 AITSM = 15.1103 AVT0 = 1.20 VrT = 1.046 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applic
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 08G6500
Phase Control Thyristor5STP 08G6500VDRM = 6500 VIT(A V)M = 730 AIT(RMS) = 1150 AITSM = 15.1103 AVT0 = 1.20 VrT = 1.046 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applic
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2026-01-14 |
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日立能源ABB PCT晶闸管 5STP 12K6500
Phase Control Thyristor5STP 12K6500VDRM = 6500 VIT(A V)M = 1430 AIT(RMS) = 2250 AITSM = 31.5103 AVT0 = 1.15 VrT = 0.647 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2026-01-14 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(A V)M = 1830 AIT(RMS) = 2870 AITSM = 47.5103 AVT0 = 1.21 VrT = 0.431 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2026-01-14 |
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