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日立能源ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(A V)M = 3450 AIT(RMS) = 5420 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for tr
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20 Patented free-floating silicon technology Low on-state and switching losses Designed for traction,
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor VDRM, VRRM = 6500 V ITA Vm = 390 A ITSM = 4700 A VT0 = 1.200 V rT = 2.300 mΩ Patented free-floating silicon technology Low on-state losses Designed for energy and industrial applications Optimum power handling cap
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(A V)M = 340 AIT(RMS) = 540 AITSM = 4.7103 AVT0 = 1.20 VrT = 2.30 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applicati
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 08F6500
Phase Control Thyristor5STP 08F6500VDRM = 6500 VIT(A V)M = 850 AIT(RMS) = 1340 AITSM = 15.1103 AVT0 = 1.20 VrT = 1.046 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applic
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 12K6500
Phase Control Thyristor5STP 12K6500VDRM = 6500 VIT(A V)M = 1430 AIT(RMS) = 2250 AITSM = 31.5103 AVT0 = 1.15 VrT = 0.647 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(A V)M = 1830 AIT(RMS) = 2870 AITSM = 47.5103 AVT0 = 1.21 VrT = 0.431 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(A V)M = 2880 AIT(RMS) = 4520 AITSM = 65.0103 AVT0 = 1.12 VrT = 0.290 mΩ Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial appli
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2025-08-12 |
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